A semiconductor base material made of pure silicon and pure carbon is known as Silicon Carbide, or SiC. A p-type semiconductor can be created by doping SiC with beryllium, boron, aluminium, or gallium, whereas an n-type semiconductor can be created by doping SiC with nitrogen or phosphorus. Although silicon carbide comes in many forms and levels of purity, semiconductor-grade silicon carbide has only recently become available for use.
The simplest way to make silicon carbide is to melt silica sand and carbon, like coal, at temperatures as high as 2500 degrees Celsius. Iron and carbon impurities are frequently present in the darker, more prevalent forms of silicon carbide, although pure Silicon Carbide crystals are colourless and form when silicon carbide sublimes at 2700 degrees Celsius.
The Lely method describes the mechanism by which these crystals are heated and then deposit onto graphite at a lower temperature.
Lely method: In this procedure, silicon carbide powder is sublimated by heating a granite crucible to a very high temperature, typically using induction. Because a lower-temperature graphite rod is suspended in the gaseous mixture, pure silicon carbide can naturally deposit and form crystals.
Chemical vapour deposition, which is frequently employed in carbon-based synthesis procedures and utilised in the semiconductor industry, is an alternative method by which producers build cubic Silicon Carbide. In this procedure, a specific chemical gas mixture combines in a vacuum atmosphere before being deposited onto a substrate.
Both silicon carbide wafer fabrication techniques require a significant investment in time, resources, and expertise to be effective.
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