Gan Epitaxial Wafers
Due to its capacity for high frequency and high temperature operation, GaN is frequently used in radio frequency devices, LEDs, and power electronics. One of the main factors driving the expansion of the Gan Epitaxial Wafers is the expanding use of LEDs. Furthermore, improvements in GaN technology have produced effective GaN substrates with low defect densities and free macro defects. GaN substrates can thus be employed more frequently to realise LEDs with wafer diameters ranging from 2 inches to 6 and 8 inches. During the forecast period, rising LED use is anticipated to fuel market expansion for GaN epitaxial wafers. Nevertheless, Sic's rivalry in high-voltage semiconductor applications and the expensive cost of the device
