Power semiconductor components are used in electronic circuits to regulate the system's energy transfer. Most gadgets use a sort of power semiconductor device called a switched mode power supply (SMPS). Gallium Nitride Power Devices are made of the semiconductor gallium nitride (GaN). GaN power components reduce the overall energy loss of the system. Compared to conventional transistors, which require more chip area to lower on-resistance, GaN devices are compact, offer high-speed switching, and reduce system size. Because they provide equivalent features at a lower cost, GaN devices are preferred over other complete band gap materials like Silicon Carbide (SiC) and Diamond.
It is anticipated that as prices fall across different industries, demand for Gallium Nitride Power Devices would increase. GaN power transistors and modules that were recently produced have a wide band gap and offer performance comparable to SiC at a significant cost savings. This cost reduction is made feasible by the fact that Gallium Nitride Power Devices can be created using silicon substrates, which are more widely available and less expensive than SiC. GaN-on-silicon devices are projected to perform at least as well as and occasionally even better than silicon MOSFETs when compared to silicon insulated-gate bipolar transistors (IGBTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs).
Read More- https://cmiblogdailydose.blogspot.com/2023/01/gallium-nitride-power-devices-have.html
